ELPH SELFEN CARRIER DEN RANGE: Difference between revisions
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{{TAGDEF|ELPH_SELFEN_CARRIER_DEN_RANGE|[real array]}} | {{TAGDEF|ELPH_SELFEN_CARRIER_DEN_RANGE|[real array]}} | ||
Description: List | Description: List of carrier density ranges in logarithmic scale (in <math>cm^{-3}</math>) at which to compute the phonon-mediated electron self-energy and transport coefficients. | ||
{{Available|6.5. | <!--{{Available|6.5.2}}--> | ||
{{not released}} | |||
---- | ---- | ||
From each carrier density specified in the array, a positive (electron doping) or negative (hole doping) number of electrons is added to the value of {{TAG|NELECT}} and the chemical potential computed | From each carrier density specified in the array, a positive (electron doping) or negative (hole doping) number of electrons is added to the value of {{TAG|NELECT}} and the chemical potential computed. A range of carrier densities can be defined using {{TAGO|ELPH_SELFEN_CARRIER_DEN_RANGE|l u n}}, where: | ||
* ''l'' is the lower limit of the carrier density range. | * ''l'' is the lower limit of the carrier density range. | ||
* ''u'' is the upper limit of the carrier density range. | * ''u'' is the upper limit of the carrier density range. | ||
* ''n'' is the number of steps between the two limits. | * ''n'' is the number of steps between the two limits. | ||
{{NB|important| | |||
The range of carrier densities is used to generate a log-scale mesh of carrier densities. | |||
{{NB|important|''l'' or ''u'' must be both positive (''n''-doping) or both negative (''p''-doping).}} | |||
<!--This can be useful for producing contour plots, e.g., of the ZT figure of merit link to elph-part5 tutorial + add in the list of mu in the OUTCAR?--> | <!--This can be useful for producing contour plots, e.g., of the ZT figure of merit link to elph-part5 tutorial + add in the list of mu in the OUTCAR?--> | ||
For example, {{TAGO|ELPH_SELFEN_CARRIER_DEN_RANGE|- | You can add the range (''l'' ''u'' ''n'') N times, so you can have several different meshes of holes or electrons or both. For example, {{TAGO|ELPH_SELFEN_CARRIER_DEN_RANGE|-1e20 -1e16 51 1e20 1e16 51}} would create a list of two meshes of carrier densities, (<code>-1e20 -1e16 51</code>) and (<code>1e20 1e16 51</code>). The first mesh has <code>51</code> carrier densities of holes between <code>-1e16</code> and <code>-1e20</code>; the second mesh has <code>51</code> carrier densities of electrons between <code>1e16</code> and <code>1e20</code>. You could also include more meshes if you want. You can check the carriers that you have chosen in the {{FILE|OUTCAR}} file: | ||
Chemical potential calculation: | |||
=============================== | |||
elph_ismear=-24 | |||
elph_fermi_nedos= 501 | |||
elph_selfen_carrier_den= | |||
-0.100E+21 | |||
-0.832E+20 | |||
-0.692E+20 | |||
... | |||
-0.145E+17 | |||
-0.120E+17 | |||
-0.100E+17 | |||
0.100E+21 | |||
0.832E+20 | |||
0.692E+20 | |||
... | |||
0.145E+17 | |||
0.120E+17 | |||
0.100E+17 | |||
==Related tags and articles== | ==Related tags and articles== | ||
* [[Transport coefficients including electron-phonon scattering|Transport calculations]] | * [[Transport coefficients including electron-phonon scattering|Transport calculations]] | ||
* [[Electron-phonon accumulators]] | * [[Electron-phonon accumulators]] | ||
* [[Chemical potential in electron-phonon interactions]] | |||
* {{TAG|ELPH_RUN}} | * {{TAG|ELPH_RUN}} | ||
* {{TAG|ELPH_SELFEN_MU}} | * {{TAG|ELPH_SELFEN_MU}} |
Latest revision as of 10:37, 21 October 2025
ELPH_SELFEN_CARRIER_DEN_RANGE = [real array]
Description: List of carrier density ranges in logarithmic scale (in [math]\displaystyle{ cm^{-3} }[/math]) at which to compute the phonon-mediated electron self-energy and transport coefficients.
Warning: Not yet released!
This page contains information about a feature that will be available in a future release of VASP. In other words, currently you cannot use it even with the latest version of VASP. The information may change significantly until it is released.
From each carrier density specified in the array, a positive (electron doping) or negative (hole doping) number of electrons is added to the value of NELECT and the chemical potential computed. A range of carrier densities can be defined using ELPH_SELFEN_CARRIER_DEN_RANGE = l u n
, where:
- l is the lower limit of the carrier density range.
- u is the upper limit of the carrier density range.
- n is the number of steps between the two limits.
The range of carrier densities is used to generate a log-scale mesh of carrier densities.
Important: l or u must be both positive (n-doping) or both negative (p-doping). |
You can add the range (l u n) N times, so you can have several different meshes of holes or electrons or both. For example, ELPH_SELFEN_CARRIER_DEN_RANGE = -1e20 -1e16 51 1e20 1e16 51
would create a list of two meshes of carrier densities, (-1e20 -1e16 51
) and (1e20 1e16 51
). The first mesh has 51
carrier densities of holes between -1e16
and -1e20
; the second mesh has 51
carrier densities of electrons between 1e16
and 1e20
. You could also include more meshes if you want. You can check the carriers that you have chosen in the OUTCAR file:
Chemical potential calculation: =============================== elph_ismear=-24 elph_fermi_nedos= 501 elph_selfen_carrier_den= -0.100E+21 -0.832E+20 -0.692E+20 ... -0.145E+17 -0.120E+17 -0.100E+17 0.100E+21 0.832E+20 0.692E+20 ... 0.145E+17 0.120E+17 0.100E+17