Beta-tin Si: Difference between revisions
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[http://www.vasp.at/vasp-workshop/examples/2_5_beta-tinSi.tgz 2_5_beta-tinSi.tgz] | [http://www.vasp.at/vasp-workshop/examples/2_5_beta-tinSi.tgz 2_5_beta-tinSi.tgz] | ||
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[[ | [[VASP tutorials|To the list of examples]] or to the [[The_VASP_Manual|main page]] | ||
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Revision as of 11:08, 4 July 2017
Overview > fcc Si > fcc Si DOS > fcc Si bandstructure > cd Si > cd Si volume relaxation > cd Si relaxation > beta-tin Si > fcc Ni > graphite TS binding energy > graphite MBD binding energy > graphite interlayer distance > List of tutorials
Task
Relaxation of the internal coordinates, volume and cell shape in beta-tin Si.
Input
POSCAR
beta Sn
4.9000000000000
1.0 0.0 0.0
0.0 1.0 0.0
0.5 0.5 0.26
2
Direct
-0.125 -0.375 0.25
0.125 0.375 -0.25
INCAR
System = beta Si ISMEAR = 0; SIGMA = 0.1; ENMAX = 240 IBRION=2; ISIF=3 ; NSW=15 EDIFF = 0.1E-04 EDIFFG = -0.01
KPOINTS
k-points 0 Monkhorst Pack 11 11 11 0 0 0
Calculation
This example is completely analagous to cd Si volume relaxation.
Download
To the list of examples or to the main page