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| {{TAG|ISMEAR}} | | {{TAG|ISMEAR}} |
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| == Example Calculations using this Tag ==
| | {{sc|SIGMA|Examples|Examples that use this tag}} |
| {{TAG|Bandgap of Si in GW}}, {{TAG|Bandstructure of Si in GW (VASP2WANNIER90)}}, {{TAG|Bandgap of Si using different DFT+HF methods}}, {{TAG|Beta-tin Si}}, {{TAG|Cd Si}}, {{TAG|Cd Si relaxation}}, {{TAG|Cd Si volume relaxation}}, {{TAG|CO on Ni 111 surface}}, {{TAG|Dielectric properties of Si}}, {{TAG|Dielectric properties of SiC}}, {{TAG|H2O}}, {{TAG|H2O molecular dynamics}}, {{TAG|Fcc Ni}}, {{TAG|Fcc Si}}, {{TAG|Fcc Si bandstructure}}, {{TAG|Graphite interlayer distance}}, {{TAG|Graphite MBD binding energy}}, {{TAG|Graphite TS binding energy}}, {{TAG|MgO optimum mixing}}, {{TAG|Ni 100 surface bandstructure}}, {{TAG|Ni 100 surface relaxation}}, {{TAG|Ni 111 surface high precision}}, {{TAG|O atom spinpolarized low symmetry}}, {{TAG|Si bandstructure}}, {{TAG|STM of graphene}}, {{TAG|STM of graphite}}, {{TAG|Vibrational frequencies of CO on Ni 111 surface}} | |
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| [[The_VASP_Manual|Contents]]
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| [[Category:INCAR]] | | [[Category:INCAR]][[Category:Electronic Minimization]] |
Revision as of 10:45, 19 April 2019